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AF002C4-39 - GaAs IC Control FET

Datasheet Summary

Description

This group of GaAs control FETs can be used in both series and shunt configurations.

They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW.

Features

  • s Low Cost SOT-23 Package s Series or Shunt Configuration s Low DC Current Drain s Ideal Switch Building Blocks s Pin Diode Replacements s High Power Antenna Switches SOT-23 0.120 (3.05 mm) 0.110 (2.79 mm) 3 0.018 (0.45 mm) 0.015 (0.38 mm) 0.055 (1.40 mm) 0.047 (1.19 mm) 0.024 (0.61 mm) 0.018 (0.45 mm) 0.080 (2.03 mm) 0.070 (1.78 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 1 2 0.104 (2.64 mm) 0.083 (2.10 mm) 0.040 (1.02 mm) 0.037 (0.94 mm).

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Datasheet preview – AF002C4-39

Datasheet Details

Part number AF002C4-39
Manufacturer Alpha Industries
File Size 43.27 KB
Description GaAs IC Control FET
Datasheet download datasheet AF002C4-39 Datasheet
Additional preview pages of the AF002C4-39 datasheet.

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Full PDF Text Transcription

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GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Features s Low Cost SOT-23 Package s Series or Shunt Configuration s Low DC Current Drain s Ideal Switch Building Blocks s Pin Diode Replacements s High Power Antenna Switches SOT-23 0.120 (3.05 mm) 0.110 (2.79 mm) 3 0.018 (0.45 mm) 0.015 (0.38 mm) 0.055 (1.40 mm) 0.047 (1.19 mm) 0.024 (0.61 mm) 0.018 (0.45 mm) 0.080 (2.03 mm) 0.070 (1.78 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 1 2 0.104 (2.64 mm) 0.083 (2.10 mm) 0.040 (1.02 mm) 0.037 (0.94 mm) Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW.
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