AF002C4-39 Description
This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias ponents and minimizes power drain to typically 25 µW.
AF002C4-39 Applications
- resistance in Ω in low impedance state when “0” V is applied to Gate (G). 4. Insertion loss changes by 0.003 dB/°C. 5. Insertion loss and isolation typical valu
- capacitance (pF) in high impedance state when -5 V is applied to Gate (G)