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General Purpose PHEMT Chip
AFP02N8-000 Features
s Low Noise Figure, 1.25 dB @ 4 GHz s High Associated Gain, 15.0 dB @ 4 GHz s High MAG, > 18 dB @ 4 GHz s 0.7 µm Ti/Pd/Au Gates s Passivated Surface
350 125 S G G S 50 50 D D 78 50
Description
The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making it suitable for a wide range of commercial and military applications.The device employs 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part.