Datasheet Details
| Part number | AFP02N8-213 |
|---|---|
| Manufacturer | Alpha Industries |
| File Size | 30.34 KB |
| Description | General Purpose Packaged PHEMT Chips |
| Datasheet |
 AFP02N8-213 Datasheet
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General Description
The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications.
The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part.
Key Features
- s Low Noise Figure, 1.55 dB @ 4 GHz s High Associated Gain, 13 dB @ 4 GHz s High MAG, > 15 dB @ 4 GHz s 0.7 µm Ti/Pd/Au Gates s Passivated Surface s Low Cost Metal Ceramic Package s Available with Two Lead Lengths s Available in Tape and Reel Packaging Source 212 Gate Drain Drain Source Gate Source 213 Source Absolute Maximum Ratings Characteristic Value 6V -3 V IDSS 10 µA 300 mW -65 to +150°C 175°C Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS.