AFP02N8-213 Datasheet PDF | Alpha Industries

Alpha Industries AFP02N8-213

The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. The components are also available in tape and reel and are ready for automatic insertion equipment.

Part No.	AFP02N8-213
Datasheet	AFP02N8-213 Download
Manufacturer	Alpha Industries
Description	General Purpose Packaged PHEMT Chips
Buy	Stock & Price

FEATURES

s Low Noise Figure, 1.55 dB @ 4 GHz s High Associated Gain, 13 dB @ 4 GHz s High MAG, > 15 dB @ 4 GHz s 0.7 µm Ti/Pd/Au Gates s Passivated Surface s Low Cost Metal Ceramic Package s Available with Two Lead Lengths s Available in Tape and Reel Packaging Source 212 Gate Drain Drain Source Gate Source 213 Source

ABSOLUTE MAXIMUM RATINGS

Characteristic Value 6V -3 V IDSS 10 µA 300 mW -65 to +150°C 175°C Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH)

DESCRIPTION

Available in metal ceramic packages with a choice of two lead lengths.

ELECTRICAL SPECIFICATIONS

at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Source Breakdown Voltage (Vbgs) Noise Figure (NF) Associated Gain (GA) Test Conditions VDS = 2 V, VGS = 0 V VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 0.3 mA IGS = -200 µA Min. 25.0 30.0 -0.4 -6.0 Typ. 55.0 45.0 -1.2 8.0 1.55 12.0 13.2 2.0 -2.0 Max.