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AM035N5-00 - 32-37 GHz GaAs MMIC Ring Hybrid Mixer

General Description

Alpha’s ring hybrid GaAs Schottky diode mixer has a typical conversion loss of 6.0 dB at an LO power level as low as 9 dBm over the band 32

37 GHz.

The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability.

Key Features

  • Chip Outline 2.800 2.471 2.027 I Low Conversion Loss, 6.0 dB I Low LO Power Requirement, 9 dBm I High LO to RF Isolation, 28 dB I No DC Bias Required.

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Datasheet Details

Part number AM035N5-00
Manufacturer Alpha Industries
File Size 56.82 KB
Description 32-37 GHz GaAs MMIC Ring Hybrid Mixer
Datasheet download datasheet AM035N5-00 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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32–37 GHz GaAs MMIC Ring Hybrid Mixer AM035N5-00 Features Chip Outline 2.800 2.471 2.027 I Low Conversion Loss, 6.0 dB I Low LO Power Requirement, 9 dBm I High LO to RF Isolation, 28 dB I No DC Bias Required Description Alpha’s ring hybrid GaAs Schottky diode mixer has a typical conversion loss of 6.0 dB at an LO power level as low as 9 dBm over the band 32–37 GHz. The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. 0.