SMV1270-079 Datasheet | Alpha Industries

Features s High Capacitance Ratio s Ultra Small Size SC-79 Package s Designed for High Volume, Low Cost Battery Applications s Available in Tape and Reel Packaging Description The SMV1270-079 is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low RS of this varactor make it appropriate for low noise VCOs used at frequencies in wireless systems to beyond 2.5 GHz. Applications include low noise and wideband UHF and VHF VCO for GSM, PCS, CDMA and analog phones. Absolute Maximum Ratings Characteristic Forward Current (IF) Power Dissipation (PD) Storage Temperature (TST) Operating Temperature (TOP) Value 20 m A 250 m W -55°C to +150°C -55°C to +125°C Electrical Specifications at 25°C Parameter Reverse Current (IR) Capacitance (CT) Capacitance (CT) Capacitance Ratio (CTR) Series Resistance (RS) Breakdown Voltage (VBR) VR = 20 V CT @ 0.5 V, VR = 0.5 V, F = 1 MHz CT @ 2.5 V, VR = 2.5 V, F = 1 MHz CT (0.5 V)/CT (2.5 V) VR = 1 V, F = 470 MHz IR = 10 µA 20.0 22.1 7.7 2.3 23.6 8.6 2.7 0.7 Ω V Condition Min. Typ. Max. 20.0 25.1 9.8 Unit n A p F p F Alpha Industries, Inc. [781] 935-5150 - Fax [617] 824-4579 - Email sales@alphaind. - .alphaind. Specifications subject to change without notice. 6/99A Hyperabrupt Junction Tuning Varactor Typical Performance Data 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Capacitance vs. Voltage VR (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 CT (p F) 23.64 17.81 13.69 10.74 8.60 7.03 5.87 5.00 4.35 3.85 Capacitance (p F) Varactor Voltage (V) Capacitance vs. Voltage SPICE Model Percent of Variation (%) 4 3 2 1 0 -1 -2 -3 -4 -40 -20 0 20 40 VVAR = 2.5 V VVAR = 1 V PORT P_anode port = 1 IND LS L = LS DIODEM Diode_Model IS = 1.00e-14 RS = 0 N=1 TT = 0 CJO = CJO M=M EG = 1.11 XTI = 3 KF =0 AF =1 FC = 0.5 BV = 0 IBV = 1e-3 ISR = 0 NR = 2 IKF = 0 NBV = 1 IBVL = 0 NBVL = 1 TBV1 = 0 TNOM = 27 FFE = 1 VVAR = 4 V RES RS R = RS DIODE...