Datasheet Summary
AO4422A N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This .. device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical.
Features
VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V)
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