Datasheet Summary
July 2001
AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
Features
VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V) RDS(ON) < 64mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
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