Datasheet Summary
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AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested!
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1 G1
D1
D2
SOIC-8
G2 S1...
