Datasheet Summary
AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
Features
FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ UIS TESTED! Rg,Ciss,Coss,Crss Tested
General Description
The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC .. converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4926 is Pb-free (meets ROHS & Sony 259...