Datasheet Summary
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO5803E and AO5803EL are electrically identical.
-RoHS pliant -AO5803EL is Halogen Free
Features
VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V)
ESD PROTECTED
S1 G1
D2
SC-89-6
D1 G1 G2
D1
G2...