Datasheet Summary
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AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specifications). AO8803L is a Green Product ordering option. AO8803 and AO8803L are electrically identical.
Features
VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM
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