Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RSS(ON)
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 3.5mΩ < 3.7mΩ < 3.75mΩ < 4.3mΩ < 5mΩ
HBM Class 2
AlphaDFN™ 3.05x1.77A_6
Top View
Bottom View
Pin1
Pin1
Orderable Part Number
Top View Pin1
Bottom View 13
S1 G1 S1
S2...