Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Ultra low RSS(ON)
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Typical ESD protection
12V
< 3.5mΩ < 3.75mΩ < 4.3mΩ < 5mΩ
HBM Class 2
AlphaDFNTM 3.05x1.77B_6
Top View
Bottom View
Top View
S2
G2
S2
Pin1
Orderable Part Number
S1
Pin1
Package Type
AlphaDFNTM 3.05x1.77B_6
G1...