Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RSS(ON)
- With ESD protection to improve battery performance and safety
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 5mΩ < 5.3mΩ < 5.5mΩ < 6mΩ < 7mΩ
HBM Class 3A
AlphaDFN 2.7x1.81A_6
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Bottom View
Top View
Bottom View
Pin1
Pin1
Orderable Part Number
Pin1
S1
G1
S1
G1
G2...