Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Ultra low RSS(ON)
- mon drain configuration for design simplicity
- RoHS 2.0 and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 1.4mΩ < 1.5mΩ < 1.8mΩ < 2.2mΩ
HBM Class 2
AlphaDFNTM3x2.74_14
Top View
Bottom View
Pin1
Top View
Pin1
1,2,3,4,5,6: Source(FET1)
7: Gate(FET1)
9,10,11,12,13,14: Source(FET2) 8: Gate(FET2)
Orderable...