Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Ultra low RSS(ON)
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 1.8mΩ < 2mΩ < 2.3mΩ < 2.8mΩ
HBM Class 3A
AlphaDFNTM 2.52x2.52_10
Top View
Bottom View
Top View
G1
Pin1
Orderable Part Number
Pin1
1,2,4,5 : Source1(FET1) 6,7,9,10 : Source2(FET2)
3: Gate1(FET1) 8:...