Datasheet Summary
12V mon-Drain Dual N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Ultra low RSS(ON)
- mon drain configuration for design simplicity
- RoHS and Halogen-Free pliant
Applications
- Battery protection switch
- Mobile device battery charging and discharging
Product Summary
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 2.8mΩ < 3mΩ < 3.5mΩ < 4.2mΩ
HBM Class 2
AlphaDFNTM 2.98x1.49_10
Top View
D1
D2
Top View
Bottom View
2 3
G1
G2
Pin1
Pin1 1, 2, 4, 5: Source(FET1) 6, 7, 9, 10: Source(FET2)
S1
S2
3: Gate(FET1)
8:...