Datasheet Summary
AOD11S60/AOI11S60
600V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 45A 0.399Ω 11nC 2.7µJ
Top View
TO252 DPAK
Bottom View
Top View
TO251A IPAK Bottom View
S G AOD11S60
AOI11S60
Absolute Maximum...
