Datasheet Summary
AOD417 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
-RoHS pliant -Halogen Free-
Features
VDS (V) = -30V
ID = -25A
(VGS = -10V)
RDS(ON) < 34mΩ (VGS = -10V)
RDS(ON) < 55mΩ (VGS = -4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK Bottom...
