Datasheet Summary
AOD4187 P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications
VDS (V) = -40V ID = -45A RDS(ON) < 17mΩ RDS(ON) < 23mΩ
(VGS = -10V) (VGS = -10V) (VGS = -4.5V)
-RoHS pliant -Halogen Free-
100% UIS Tested! 100% Rg Tested!
TO-252
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