Datasheet Summary
AOD425 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected.
-RoHS pliant -Halogen Free-
Features
VDS (V) = -30V ID = -40A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 35mΩ (VGS = -5V)
ESD Protected! 100% Rg Tested!
TO-252
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