Datasheet Summary
AOD609G plementary Enhancement Mode Field Effect Transistor
General Description
The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications.
-RoHS pliant -Halogen Free-
Features n-channel
VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested!
100% Rg Tested!
Top View
TO-252-4L D-PAK
D1/D2
Bottom View
Top View Drain Connected to Tab
D1/D2
G2 S2 G1...