Datasheet Summary
AOI472 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOI472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOI472 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6.4 mΩ (VGS = 10V) RDS(ON) <9.7 mΩ (VGS = 4.5V)
UIS Teste1d93 Rg,Ciss,Co1s8s,Crss Tested
IPAK
GD S
Top View Drain Connected to...