Datasheet Summary
AOM040V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET
Features
- Proprietary αSiC MOSFET technology
- Low loss, with low RDS, ON
- Fast switching with low RG and low capacitance
- Flexible gate voltage range (VGS = 15 to 18 V)
- Low reverse recovery diode (Qrr)
- AEC-Q101 Automotive Qualified
Applications
- xEV Charger
- Electric Vehicle Supply Equipment (EVSE)
- Motor Drives
- Automotive Inverters
Pin Configuration
Top View
Product Summary
VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800 V 100% UIS Tested
1200 V 100 A 40 mΩ 143 nC 44 µJ
Bottom View
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(1) (2)(3)(4)
Ordering Part Number AOM040V120X2Q
Package Type TO-247-4L
Form...