Datasheet Summary
AON6405L P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6405L bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.
Features
VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8mΩ (VGS = -4.5V) ESD Protected! 100% UIS Tested!
-RoHS pliant -Halogen Free
Top View Fits SOIC8 footprint !
S S S G D D D D G
Rg
DFN5X6...
