Datasheet Summary
30V Dual Asymmetric N-Channel MOSFET
General Description
- Trench Power αMOS Technology
- Low RDS(ON)
- Low Gate Charge
- High Current Capability
- RoHS and Halogen-Free pliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 30V 50A < 5.2mΩ < 8.6mΩ
Q2 30V 82A < 2.8mΩ < 3.5mΩ
Applications
- DC/DC Converters in puting
- Isolated DC/DC Converters in Tele and Industrial
100% UIS Tested 100% Rg Tested
DFN5X6D
Top View
Bottom View
Top View
Bottom View
S2 G2
S2
S2
PHASE
(S1/D2)
PIN1
D1 D1G1
D1 D1
PIN1
PHASE...