Datasheet Summary
30V N-Channel MOSFET
General Description
- Trench Power MOSFET technology
- Low RDS(ON)
- Low Gate Charge
- High Current Capability
- RoHS 2.0 and Halogen-Free pliant
Applications
- High performance ORing, Efuse
- Ultra high current battery charge/discharge
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
Max Tj=175°C
30V 480A < 0.85mΩ < 4.6mΩ
DFN5X6
Top View
Bottom View
Top View
PIN1
S1 S2 S3 G4 PIN1
8D 7D 6D 5 DG
Orderable Part Number
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order...