Datasheet Summary
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AOP607 plementary Enhancement Mode Field Effect Transistor
General Description
The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical.
Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56m Ω (VGS=10V) < 105mΩ (VGS =-10V) < 77m Ω (VGS=4.5V) < 135mΩ (VGS =-4.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1...