Datasheet Summary
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AOT430 N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V)
General Description
The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).
UIS TESTED!
TO-220 D
Top View Drain Connected to...
