Datasheet Summary
AOT460 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical.
-RoHS pliant -Halogen Free
Features
VDS (V) = 60V
ID = 85 A
(VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
100% UIS Tested!
TO220
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S GD
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