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DMJxxxx - Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

Description

Alpha beam lead and chip Schottky barrier mixer diodes are designed for applications through 40 GHz in Ka

band.

lead design eliminates the problem of bonding to the very small junction area that is characteristic of the low capacitance involved in microwave devices.

Features

  • Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication.

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Datasheet Details

Part number DMJxxxx
Manufacturer Alpha
File Size 149.25 KB
Description Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
Datasheet download datasheet DMJxxxx Datasheet
Additional preview pages of the DMJxxxx datasheet.

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    www.DataSheet4U.com Silicon Beam–Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam–lead and chip Schottky barrier mixer diodes are designed for applications through 40 GHz in Ka–band. The beam–lead design eliminates the problem of bonding to the very small junction area that is characteristic of the low capacitance involved in microwave devices. Beam–lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.
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