FEATURES
High Reliability Low Loss Operation Through 26 GHz Wide Temperature Operation DESCRIPTION
The FET Chip Mounting Capacitor is an MIS thin film device which features small size and very high Q making it ideal for hybrid microelectronic applications at microwave frequencies. The device has a dielectric composed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric possesses a low temperature coefficient of capacitance, very high insulation resistance (typically greater than 1012 ohms), and low dissipation factor. The device also exhibits excellent long term stability making it suitable for high reliability applications. The capacitor has a high dielectric breakdown which permits the use of thin dielectrics resulting in large capacitance in a small area. The plated gold metalization on the top face of the chip extends over most of the top surface. Gold wire can be readily thermocompression bonded to this metalization. The back side of the chip is also gold metallized and is readily solderable.
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