FIGB25N120TDG
FIGB25N120TDG is IGBT manufactured by American First Semiconductor.
IGBT
General Description
Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation.
Features
ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V
@ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capability
Application
ƽ Power switch circuit of induction cooker(IH).
PIN Connection
TO-3P/TO-247AD
G CE
VCES IC Ptot TC=25℃
VCE(SAT)
1200 V 25 A 320 W 2.0 V
Marking Diagram
YAWW FIGB 25N120TD
Y = Year A = Assembly Location WW = Work Week FIGB25N120TD = Specific Device...
