MBR3060PTG Datasheet | American First Semiconductor

Features Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.17", (4.3mm) from case Green pound with suffix "G" on packing code & prefix "G" on datecode 1 2 3 Mechanical Data Case: JEDEC TO-3P/TO-247AD molded plastic Polarity: As marked Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Mounting position:Any Weight: 6.12 grams Mounting torque: 10 in- lbs, max MARKING DIAGRAM YAWW MBR30XXPT Y = Year A = Assembly Location WW = Work Week MBR30XXPT = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=105℃ Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage (Note 2) IF=15A, TA=25℃ IF=15A, TA=125℃ IF=30A, TA=25℃ IF=30A, TA=125℃ Maximum Reverse Current @ Rated VR Voltage Rate of Change,(Rated VR) Typical Junction Capacitance Maximum Thermal Resistance Per Leg Operating Temperature Range TA=25 ℃ TA=125 ℃ Storage Temperature Range Note 1: 2.0u S Pulse Width, f=1.0KHz Note 2: Pulse Test : 300u S Pulse Width, 1% Duty Cycle Symbol VRRM VRMS VDC IF(AV) MBR 3040 PTG MBR 3045 PTG MBR 3050...