MBRS180G Datasheet | American First Semiconductor

Features - Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. - Low profile surface mounted application in order to optimize board space. - Low power loss, high efficiency. - High current capability, low forward voltage drop. - High surge capability. - Guardring for overvoltage protection. - Ultra high-speed switching. - Silicon epitaxial planar chip, metal silicon junction. - Lead-free parts meet environmental standards of MIL-STD-19500 /228 - Suffix "-H" indicates Halogen-free parts, ex. MBRS120G-H. Mechanical data - Epoxy: UL94-V0 rated frame retardant - Case: Molded plastic, DO-214AC / SMA - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 - Polarity: lndicated by cathode band - Mounting Position: Any - Weight: Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T A=25o C unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.1 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage SYMBOL MIN. IO TYP. MAX. UNIT 1.0...