TS820-800TG Datasheet | American First Semiconductor

Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. TS820-600T(800T)G Simplified outline TO-220AB Features - Blocking voltage to 800 V - On-state RMS current to 8 A - Ultra low gate trigger current Applications - Motor control - Industrial and domestic lighting - Heating - Static switching Symbol ak g Pin 1 2 3 TAB Description cathode anode gate anode SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current ITSM Non-repetitive peak on-state current 600TG 800TG Value 600 800 Unit SYMBOL Rth j-c PARAMETER Junction to case (DC) Rth j-a Junction to ambient (DC) @ 2010 Copyright By American First Semiconductor Value 20...