Datasheet4U Logo Datasheet4U.com

BLC10G18XS-360AVT - Power LDMOS transistor

General Description

360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Datasheet Details

Part number BLC10G18XS-360AVT
Manufacturer Ampleon
File Size 713.75 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC10G18XS-360AVT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLC10G18XS-360AVT Power LDMOS transistor Rev. 1 — 30 November 2017 Product data sheet 1. Product profile 1.1 General description 360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.6 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 56 17.0 50.5 29.5 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF. 1.