BLC10G18XS-400AVT - Power LDMOS transistor

Ampleon

General Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

Table 1.

Key Features

Excellent ruggedness.
High efficiency.
Low thermal resistance providing excellent thermal stability.
Lower output capacitance for improved performance in Doherty applica.

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Datasheet Details

Part number	BLC10G18XS-400AVT
Manufacturer	Ampleon
File Size	749.35 KB
Description	Power LDMOS transistor
Datasheet	BLC10G18XS-400AVT Datasheet

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Full PDF Text Transcription (Reference)

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BLC10G18XS-400AVT Power LDMOS transistor Rev. 1 — 19 April 2018 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and production circuit (VDS = 28 V); IDq = 860 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified. Test signal f (MHz) VDS PL(AV) Gp D ACPR (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 56 16.5 49.0 29.7 [1] 1805 to 1880 32 93 17.0 49.5 29.5 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF. 1.