Datasheet4U Logo Datasheet4U.com

BLC10G27LS-320AVT - Power LDMOS transistor

General Description

320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth.
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Datasheet Details

Part number BLC10G27LS-320AVT
Manufacturer Ampleon
File Size 643.61 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC10G27LS-320AVT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLC10G27LS-320AVT Power LDMOS transistor Rev. 2 — 1 December 2017 Product data sheet 1. Product profile 1.1 General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2500 to 2700 28 50 16 D (%) 45 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.