BLC10M6XS200 Description
200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz. The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package. Typical performance RF performance at VDS = 28.
BLC10M6XS200 Key Features
- High efficiency
- Easy power control
- Excellent ruggedness
- Excellent thermal resistance due to copper flange
- Integrated ESD protection
- Designed for broadband operation (425 MHz to 450 MHz)
- Internally input matched
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances