BLC10M6XS200 Datasheet PDF (Power LDMOS transistor)

BLC10M6XS200 - Power LDMOS transistor

Description

200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz.

The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package.

Table 1.

Features

High efficiency.
Easy power control.
Excellent ruggedness.
Excellent thermal resistance due to copper flange.
Integrated ESD protection.
Designed for broadband operation (425 MHz to 450 MHz).
Internally input matched.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Datasheet Details

Part number	BLC10M6XS200
Manufacturer	Ampleon
File Size	308.40 KB
Description	Power LDMOS transistor
Datasheet	BLC10M6XS200 Datasheet
Additional preview pages of the BLC10M6XS200 datasheet.

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Full PDF Text Transcription

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BLC10M6XS200 Power LDMOS transistor Rev. 1 — 5 December 2016 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz. The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 C in a class-AB application circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 440 28 200 21 80 1.

Published: Apr 27, 2018 |