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BLC2425M9LS250 - Power LDMOS transistor

General Description

250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLC2425M9LS250 is designed for high-power CW applications and is assembled in a high performance plastic package.

Table 1.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Internally input and output matched.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLC2425M9LS250
Manufacturer Ampleon
File Size 1.22 MB
Description Power LDMOS transistor
Datasheet download datasheet BLC2425M9LS250 Datasheet

Full PDF Text Transcription for BLC2425M9LS250 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLC2425M9LS250. For precise diagrams, and layout, please refer to the original PDF.

BLC2425M9LS250 Power LDMOS transistor Rev. 3 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial,...

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e 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLC2425M9LS250 is designed for high-power CW applications and is assembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C in a class-AB application circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) CW 2450 32 250 18 61 CW pulsed [1] 2450 32 250 18.5 62 [1] tp = 100 s;  = 10 % 1.