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BLC8G20LS-310AV - Power LDMOS transistor

Description

310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLC8G20LS-310AV
Manufacturer Ampleon
File Size 508.70 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G20LS-310AV Datasheet
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Full PDF Text Transcription

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BLC8G20LS-310AV Power LDMOS transistor Rev. 5 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 1930 to 1995 28 47.5 17 42.5 33 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier. 1.
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