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BLC8G20LS-400AV - Power LDMOS transistor

Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

Features

  • Excellent ruggedness.
  • Excellent electrical stability.
  • Suitable for conventional and inverted Doherty.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capa.

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Datasheet Details

Part number BLC8G20LS-400AV
Manufacturer Ampleon
File Size 493.62 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G20LS-400AV Datasheet
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Full PDF Text Transcription

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BLC8G20LS-400AV Power LDMOS transistor Rev. 4 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 32 85 15.5 44 31 [1] 1930 to 1990 32 85 15.5 44 35 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF. 1.
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