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BLC8G21LS-160AV - Power LDMOS transistor

Description

160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

Features

  • Designed for broadband operation (1805 MHz to 2025 MHz).
  • Decoupling leads to enable improved video bandwidth.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Internally matched for ease of use.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substa.

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Datasheet Details

Part number BLC8G21LS-160AV
Manufacturer Ampleon
File Size 416.95 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G21LS-160AV Datasheet
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Full PDF Text Transcription

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BLC8G21LS-160AV Power LDMOS transistor Rev. 4 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board. Test signal f IDq VDS PL(AV) (MHz) (mA) (V) (W) 1-carrier W-CDMA 1805 to 1880 350 28 22 1-carrier W-CDMA 1880 to 2025 350 28 22 Gp D ACPR (dB) (%) (dBc) 16 49 30 [1] 15.5 47 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.
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