BLC8G21LS-160AV Description
160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board. PAR = 7.2 dB at 0.01 % probability on CCDF.
BLC8G21LS-160AV Key Features
- Designed for broadband operation (1805 MHz to 2025 MHz)
- Decoupling leads to enable improved video bandwidth
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Internally matched for ease of use
- High power gain
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substa
BLC8G21LS-160AV Applications
- Designed for broadband operation (1805 MHz to 2025 MHz)
- Decoupling leads to enable improved video bandwidth