BLC8G24LS-241AV Datasheet PDF (Power LDMOS transistor)

BLC8G24LS-241AV - Power LDMOS transistor

Description

240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

Features

Excellent ruggedness.
High-efficiency.
Low thermal resistance providing excellent thermal stability.
Designed for broadband operation (2300 MHz to 2400 MHz).
Asymmetric design to achieve optimum efficiency across the band.
Lower output capacitance for im.

Datasheet Details

Part number	BLC8G24LS-241AV
Manufacturer	Ampleon
File Size	373.92 KB
Description	Power LDMOS transistor
Datasheet	BLC8G24LS-241AV Datasheet
Additional preview pages of the BLC8G24LS-241AV datasheet.

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Full PDF Text Transcription

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BLC8G24LS-241AV Power LDMOS transistor Rev. 2 — 2 December 2016 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 28 56 15 44 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.

Published: Apr 26, 2018 |