• Part: BLC8G24LS-241AV
  • Description: Power LDMOS transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 373.92 KB
Download BLC8G24LS-241AV Datasheet PDF
Ampleon
BLC8G24LS-241AV
BLC8G24LS-241AV is Power LDMOS transistor manufactured by Ampleon.
description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 m A (main); VGS(amp)peak = 0.30 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (d B) (%) (d Bc) 1-carrier W-CDMA 2300 to 2400 28 56 15 44 - 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 d B at 0.01% probability on CCDF per carrier. 1.2 Features and benefits - Excellent ruggedness - High-efficiency - Low thermal resistance providing excellent thermal stability - Designed for broadband operation (2300 MHz to 2400 MHz) - Asymmetric design to achieve optimum efficiency across the band - Lower output capacitance for...