BLC8G27LS-140AV Datasheet PDF (Power LDMOS transistor)

BLC8G27LS-140AV - Power LDMOS transistor

Description

140 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

Features

Excellent ruggedness.
High efficiency.
Low thermal resistance providing excellent thermal stability.
Decoupling leads to enable improved video bandwidth.
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLC8G27LS-140AV
Manufacturer	Ampleon
File Size	417.88 KB
Description	Power LDMOS transistor
Datasheet	BLC8G27LS-140AV Datasheet
Additional preview pages of the BLC8G27LS-140AV datasheet.

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Full PDF Text Transcription

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BLC8G27LS-140AV Power LDMOS transistor Rev. 4 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board. Test signal f VDS PL(AV) (MHz) (V) (W) 1-carrier W-CDMA 2496 to 2690 28 28 Gp (dB) 15 D (%) 46 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.

Published: Apr 26, 2018 |