BLC8G27LS-160AV Datasheet PDF (Power LDMOS transistor)

BLC8G27LS-160AV - Power LDMOS transistor

Description

160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.

Features

Excellent ruggedness.
High efficiency.
Low thermal resistance providing excellent thermal stability.
Decoupling leads to enable improved video bandwidth.
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLC8G27LS-160AV
Manufacturer	Ampleon
File Size	435.28 KB
Description	Power LDMOS transistor
Datasheet	BLC8G27LS-160AV Datasheet
Additional preview pages of the BLC8G27LS-160AV datasheet.

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Full PDF Text Transcription

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BLC8G27LS-160AV Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 31.6 14.5 D (%) 43 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.

Published: Apr 26, 2018 |