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BLC8G27LS-180AV - Power LDMOS transistor

General Description

180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a Doherty production test circuit.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Low thermal resistance providing excellent thermal stability.
  • Integrated ESD protection.
  • Designed for low memory effects providing excellent pre-distortability.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLC8G27LS-180AV
Manufacturer Ampleon
File Size 436.67 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G27LS-180AV Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLC8G27LS-180AV Power LDMOS transistor Rev. 5 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2496 to 2690 28 28 14 D (%) 43.5 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.