BLC8G27LS-210PV Description
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;.
BLC8G27LS-210PV Key Features
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth performance (150 MHz typical)
- Designed for broadband operation (2500 MHz to 2700 MHz)
- Lower output capacitance for improved performance i