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BLC8G27LS-240AV - Power LDMOS transistor

Description

240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo board.

Features

  • Excellent ruggedness.
  • High-efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (2500 MHz to 2700 MHz).
  • Asymmetric design to achieve optimum efficiency across the band.
  • Lower output capacitance for improved perfo.

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Datasheet Details

Part number BLC8G27LS-240AV
Manufacturer Ampleon
File Size 448.15 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G27LS-240AV Datasheet
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Full PDF Text Transcription

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BLC8G27LS-240AV Power LDMOS transistor Rev. 5 — 2 December 2016 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo board. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2500 to 2690 28 56 14.5 43 35 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.
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